Semiconductor having a high aspect ratio via

ABSTRACT

The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a method for forming a via structure includes forming a via in a semiconductor substrate, wherein via sidewalls of the via are defined by the semiconductor substrate; forming a dielectric layer on the via sidewalls; removing the dielectric layer from a portion of the via sidewalls; and forming a conductive layer to fill the via, wherein the conductive layer is disposed over the dielectric layer and the portion of the via sidewalls. In an example, the dielectric layer is an oxide layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.12/898,408, filed Oct. 5, 2010, issued as U.S. Pat. No. ______, theentire disclosure of which is incorporated herein by reference. Thepresent disclosure is also related to commonly-assigned U.S. patentapplication entitled Semiconductor Having a High Aspect Ratio Via(Attorney Docket No. 2010-0171-C/24061.2169), filed May ______, 2012,the entire disclosure of which is incorporated herein by reference.

BACKGROUND

The present disclosure relates generally to semiconductor manufacturing.Specifically, the present disclosure relates to metallization ofintegrated circuit semiconductor devices. More specifically, the presentdisclosure relates to a semiconductor device having an improved highaspect ratio via and a method of fabricating the same.

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs where each generation has smaller and more complexcircuits than the previous generation. However, these advances haveincreased the complexity of processing and manufacturing ICs and, forthese advances to be realized, similar developments in IC processing andmanufacturing are needed. In the mainstream course of IC evolution,functional density (i.e., the number of interconnected devices per chiparea) has generally increased while geometry size (i.e., the smallestcomponent that can be created using a fabrication process) hasdecreased. However, this mainstream evolution needs to follow theMoore's rule by a huge investment in facility establishment. Therefore,it has been a study topic that using current semiconductor technologydevelops more valuable ICs product. A complimentary metal oxidesemiconductor (CMOS) microelectromechanical systems (MEMS) devicehappens to be a good candidate for that trend.

As is well understood in the art, semiconductor devices are typicallyformed using multiple layers of material, including conductive,semi-conductive, and insulative layers. To provide electricalconductivity between layers in a semiconductor device, a hole or via maybe formed through certain layers. The via is then lined with a barrierlayer, such as Ti, TiN, or Ti/TiN, and filled with an electricallyconductive material, such as a metal, to provide electrical conductivitybetween the layers.

CMOS MEMS devices are very small electro-mechanical systems incorporatedinto CMOS semiconductor IC circuits. MEMS devices are a type ofsemiconductor device that use vias to provide electrical conductivitybetween layers of the device. One example of a MEMS device is amicro-inertial sensor. With an increase of via aspect ratio (e.g., viadepth/size) due to ever shrinking geometries of semiconductor devices,it becomes more and more difficult to provide good step coverage of thebarrier layer in the via.

If the barrier layer film coverage is not thick enough, the reactant gas(e.g., WF6) of a following wet-chemical vapor deposition (CVD) processwill attack the via sidewall silicon and create defect problems for thevia, such as voids or other open circuit issues. One reason for suchproblems is that low resistivity silicon wafers are conventionally usedin MEMS device applications. Silicon allows for a native oxide to beeasily formed in the via during the via hole etching process, especiallyalong the via sidewalls. If the sidewall oxide can not be fully removed,it can block electrical signals from passing to and from the MEMSsensor, and thus rendering the device defective. Therefore, to solve oneor more of the above mentioned issues, what is needed is an improvedsemiconductor device having an improved high aspect ratio via, and amethod of fabrication for the same.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flow chart illustrating an embodiment of a method offabricating a semiconductor device having a high aspect ratio via.

FIGS. 2-11 are cross-sectional views illustrating an embodiment of asemiconductor device according to the method of FIG. 1 at various stagesof manufacture, where FIGS. 6-11 show a via area, (shown as block A ofFIG. 5), as an enlarged view of the via to show details.

DETAILED DESCRIPTION

The present disclosure relates generally to semiconductor manufacturing.Specifically, the present disclosure relates to metallization ofintegrated circuit semiconductor devices. More specifically, the presentdisclosure relates to semiconductor devices having an improved highaspect ratio via and a method of fabricating the same. In an embodiment,the present disclosure provides a system for fabricating vias insemiconductor devices, where one or more oxide layers are deposited(e.g., using chemical vapor deposition (CVD)) into the deep via. A pretreatment process (e.g., Ar sputtering or wet clean process) may beperformed to the via before barrier deposition to remove native oxide.An oxide etching process (e.g., a dry etching process) is used to removethe oxide except along the via sidewall and to form an oxide spaceraround a top corner of the via. One or more barrier layers (e.g., Ti,TiN, Ti/TiN) are deposited by CVD, Physical vapor deposition (PVD), orother suitable process. Then, tungsten (e.g., WF6) is deposited using aCVD process, such as W-CVD to fill the deep via with an electricallyconductive material. A chemical-mechanical polishing process (e.g., atungsten etchback, WCMP process) is then performed to remove excesstungsten film, except in the deep via.

Generally, conventional semiconductor vias may have conductivityproblems because the electrical connection between vias may be blockedby a native oxide that forms in the via, especially along a sidewall ofthe via, during the via hole etching process. If the native oxide is notremoved it may block electrical signals from passing. This is generallybecause the native oxide layer causes the electrons to travel through avia top barrier to adjacent Si to connect to a neighboring via.Accordingly, device reliability is degraded if the top barrier layer isdamaged. In addition, the step coverage of a barrier layer in the bottomof the deep via is not sufficient to prevent the Si from being attackedby the WF6 during tungsten deposition into the via. This can beexaggerated if the via sidewall is damaged.

However, as should be understood by those having ordinary skill in theart, the addition of the applied oxide layer in the via of the presentdisclosure helps protect sidewall silicon in the via from being attackedby the WF6 during tungsten deposition. Additionally, the oxide spacerthat is formed around the top corner of the via after dry etchingprovides an improved profile and a substantially oxide-free silicon (Si)interface for the barrier layer deposition. Furthermore, anotheradvantage is that the WCMP process may help to form a flat and clearsurface for a later-used continuous photo process.

It is understood, however, that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the invention. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.Furthermore, descriptions of a first layer “on,” “overlying,” (and likedescriptions) a second layer includes embodiments where the first andsecond layer are in direct contact and those where one or more layersare interposing the first and second layer. The present disclosurerefers to MEMS devices; however, one of ordinary skill in the art willfind other applicable technologies that may benefit from the disclosuresuch as, nanoelectromechanical systems (NEMS) devices, applicationspecific integrated circuit (ASIC) devices, and other such devices.Furthermore, the MEMS device structure or design illustrated isexemplary only and not intended to be limiting in any manner.

FIG. 1 is a flow chart illustrating an embodiment of a method offabricating a semiconductor device having a high aspect ratio via.Cross-sectional views of an embodiment of such composite wafer deviceare shown in FIGS. 2-11 at different stages of fabrication. The presentdisclosure is described herein with respect to embodiments shown inFIGS. 2-11 relating to the method 100 provided in FIG. 1. The method 100provides for a semiconductor fabrication process that fabricates asemiconductor having a high aspect ratio via. One of ordinary skill inthe art would recognize additional steps that may be included in themethod 100 and/or omitted from the method 100. The method 100 and thecorresponding FIGS. 2-11 are exemplary only and not intended to belimiting. For example, the structure of the MEMS devices depicted inFIGS. 2-11 are exemplary only and similar methods may be used to formother devices. CMOS circuitry may be included in the device depicted inFIGS. 2-11.

FIG. 2 is a cross-sectional view illustrating an embodiment of asemiconductor device 200 having a high aspect ratio via (e.g., viadepth/via size) structure according to the method 100 of FIG. 1. Themethod 100 begins at block 102 where a first, semiconductor device wafer(e.g., bottom wafer 202) is provided and one or more cavities (e.g.,cavities 210 and 212) are formed in the wafer 202. In an embodiment, thewafer 202 is a silicon (Si) substrate. The wafer 202 may be crystallineSi or poly Si. In alternative embodiments, the wafer 202 may includeother elementary semiconductors such as germanium, or may include acompound semiconductor such as, silicon carbide, gallium arsenide,indium arsenide, and indium phosphide.

In an embodiment, the bottom wafer includes an isolation set 204 havingone or more dielectric (e.g., insulator) layers 206 and one or morepatterned conductor layers 208 embedded in or on the dielectric layer206. In an embodiment, the dielectric layer 206 includes an oxide. Theremay be any number of dielectric layers formed on the wafer 202. Thedielectric layer 206 may be silicon oxide layers formed at a thicknessrange of approximately 1 um to approximately 10 um. However, it iscontemplated that other types and sizes of dielectric layers may beformed on the wafer 202. The dielectric layer 206 may be formed on thewafer 202 by integrated circuit (IC) processes (e.g., CMOS processes),such as bonding, depositing, growing and thermally oxidizing, chemicalvapor deposition (CVD), or other methods known in the art for formingdielectric layers on a substrate 202.

Electrically conductive layer 208 is formed on the wafer 202 among theisolation set dielectric layers 206. The conductive layer 208 may beformed from a metal, such as tungsten, aluminum, copper, nickel or anyother metal. In an embodiment, the electrically conductive layer 208comprises approximately 0.5% Cu and approximately 99.5% Al. However, anyelectrically conductive material and combinations of materials may beused to form the conductive layer 208. In an embodiment, theelectrically conductive layer 208 is formed at a thickness range ofapproximately 0.8 um to approximately 1.2 um. It should be understoodthat the conductive layer 208 may be formed using patterning, masking,deposition (e.g., physical vapor deposition) and/or any other methodsnow known or known in the future for forming the conductive layers onthe wafer 202. In an embodiment, the conductive layer 208 is patternedconnection structures. In an embodiment, conductor layer 208 may beelectrically coupled to other patterned conductor layers. Also in anembodiment, the conductive layer 208 may be electrically couple tointegrated circuit devices in the wafer 202. As should be understood,the isolation set 204, including the conductor layers 208 may be formedusing conventional back-end IC processes for forming sequentialinterconnect layers and insulator layers. The electrically conductivelayer 208 may include a barrier layer formed on the electricallyconductive layer 208. This is shown as layer 240 in enlarged FIGS. 6-11and described in more detail below.

The cavity 210 is formed to receive or otherwise assist operation of aMEMS device. The cavity 210 is a free space that is etched in theisolation set 204. The cavity 210 is formed by performing a wet etchingprocess or by forming a dry plasma etching process to the isolation set204. In an embodiment, the cavity 210 extends through a portion of thedielectric layer 206. Size dimensions for the cavity 210 may be any sizeto accommodate a floating structure, such as, a MEMS device formed abovethe cavity 210.

The cavities 212 are formed to become portions of a via forcommunicating electrical signals through various layers of the device200. The cavities 212 are free spaces that are etched in the isolationset 204. The cavities 212 are formed by performing a wet etching processor by forming a dry plasma etching process to the isolation set 204. Inan embodiment, the cavities 212 extend through a portion of thedielectric layer 206 to the conductor layer 208. Size dimensions for thecavities 212 may be any size to accommodate a conductive via formedtherein, as described in more detail below.

As should be understood, one or more isolation features (not shown) maybe formed in the wafer 202. The wafer 202 may also include one or moreintegrated circuit devices (not shown), such as CMOS devices, (e.g.,NMOS and/or PMOS transistors). The wafer 202 may further includecircuitry associated with the transistors such as interconnect layers(e.g., metal lines and vias), interlayer dielectric layers (ILD), and/orinter-metal dielectric layers (IMD).

The method 100 proceeds to block 104 (FIG. 3) where a second wafer(e.g., the top wafer 214) is provided and bonded to the isolation set204 of the bottom wafer 202. In an embodiment, the top wafer 214 is alow-resistance doped silicon wafer. In an embodiment, the wafer 214 hasa resistivity less than 1 ohm-cm. In an embodiment, the wafer 202 mayinclude a silicon on insulator (SOI) substrate.

The second wafer 214 is bonded to the isolation set 204 using a lowtemperature fusion bonding process 218. Because the first wafer 202includes conductor layer 208 and dielectric layer 206, the bondingtemperature range for bonding the second wafer 214 should be from roomtemperature and should not exceed approximately 400 C to avoid damagingcomponents of the device 200. Accordingly, the present disclosureprovides a low temperature bonding of first and second wafers (e.g.,wafers 202 and 214) to create a composite wafer structure semiconductordevice. To accomplish the bonding, a set of cleaning processes may beperformed on both the first wafer 202 structure (e.g., including theisolation set 204) and the second wafer 214 before the bonding. In anembodiment, the cleaning processes may include one or more CMP processesto planarize the surfaces to be bonded. Before bonding, the wafers arecleaned by a water scrub process and dipped in HF for removal of surfaceoxide layer. Then, a surface plasma treatment is applied to create ahydrophilic surface in nitrogen and/or oxygen plasma environment. Thetwo wafers are then placed in contact with one another with a pointforce at the center point to generate an initial bond point. A bondforce of larger than 1 N and a post anneal temperature of larger 200 Ccan be applied to get a good bond strength. In an embodiment, the bondchamber has atmospheric pressure. However, in another embodiment, avacuum chamber may be used as a bonding chamber. In an embodiment, thesecond wafer 214 covers and hermetically seals the cavity 210, however,this is optional.

The method 100 then proceeds to block 106 (FIG. 4) where the top wafer214 is thinned to an appropriate thickness to form a floating structure,such as a MEMS device. The floating structure, in whole or in part, isformed in the second wafer 214 over the cavity 210. The MEMS device mayinclude a plurality of elements formed on metal, polysilicon,dielectric, and/or other materials. The MEMS device may includematerials typically used in a conventional CMOS fabrication process. Anyconfiguration of MEMS device may be possible, depending on the desiredfunctionality. One or more of the elements depicted may be designed toprovide MEMS mechanical structures of the MEMS device. The MEMSmechanical structures may include structures or elements operable formechanical movement. The MEMS device may be formed using typicalprocesses used in CMOS fabrication, for example, photolithography,etching processes (e.g., wet etch, dry etch, plasma etch), depositionprocesses, plating processes, and/or other suitable processes. In anembodiment, the MEMS device may be a motion sensor (e.g., a gyroscope,an accelerometer, etc.), a radio frequency (RF) MEMS device (e.g., an RFswitch, filter, etc.), an oscillator, or any other MEMS type device.Various sizes of MEMS devices are contemplated. Because wafer 214 isbonded to the isolation set 204, the MEMS device may be formed beforeand/or after the bonding process 218. Thus, in an embodiment, after thebonding process 218, the wafer 214, originally approximately 725 umthick, is thinned to a pre-defined thickness of approximately 30 um.Thickness range for the thinned wafer 214 may be a thickness range ofapproximately 10 um to approximately 100 um. The thinning process 222may include CMOS processes of grinding, polishing (e.g., CMP), etching,or other suitable thinning steps.

The wafer 214 is thinned to a predefined thickness, such asapproximately 10 um to approximately 100 um, based on desiredapplication for the device. A portion of the floating structure willinteract with outside perturbation, such as temperature variation,inertial movement, pressure changes, and/or other electrical, magnetic,or optical parameter measurements. In an embodiment, when the device 200is exposed to a pressure change, the floating structure/membrane willdeform inward or outward and thus, a sensing signal will be created toindicate a pressure change. It is noted that the portions of the secondwafer 214 may also include one or more circuit devices (not shown), suchas transistors (e.g., NMOS and/or PMOS transistors). The second wafer214 may also include circuitry associated with the transistors, such asinterconnect layers (e.g., metal lines and vias) and interlayerdielectric layers (ILD).

The method 100 next proceeds to block 108 (FIG. 5) where one or morevias 230 are etched in the silicon of the top wafer 214 to combine withthe cavities 212 in the semiconductor wafer 202. To form the vias 230,one or more channels are formed to extend through wafer 214 to thecavities 212 in the isolation set 204 to the conductive layer 208. Anymethod for forming channels (e.g., masking and etching) may be used toform the vias 230. The via 230 may be formed in the silicon of the topwafer using a deep plasma dry via etch process. In an embodiment, thevia width dimension 232 is larger than the cavity width dimension 234.The via hole etching may have a high-aspect-ratio (HAR)>4. A HAR isgenerally defined from a via depth divided by the via size. A HAR mayrange from a value of 4 to a value of 12.

For clarity, remaining figures, FIGS. 6-11, are shown as enlargedportions relating to the area of block A shown in FIG. 5. As mentionedabove, the conductor layer 208 may include a barrier layer 240 over theconductor layer 208. In an embodiment, the barrier layer 240 is Ti, TiN,Ta, TaN, or other suitable barrier layer material. The barrier layer maybe formed using a physical vapor deposition (PVD) process or othersuitable deposition process to have a thickness range of approximately150 angstrom to approximately 200 angstrom.

The method 100 then proceeds to block 110 (FIG. 6) where an oxide layer(e.g., oxide layer 244) is formed on the wafer 214 and in the via 230 toprotect the Si sidewalls of the via 230 from being damaged during a WF6deposit process, to form conductors in the via 230. Formation of theconductors in the via 230 is described in more detail below. The oxidelayer 244 is formed using a CVD process forming the oxide layer to athickness range of approximately 0.1 um to approximately 2 um on theinner sidewalls of the via 230. However, any suitable thickness of oxide244 may be formed in the via 230. Various CVD processes may be used toform the oxide layer 244, such as low pressure CVD (LPCVD), atmosphericpressure CVD (APCVD), sub-atmospheric CVD (SACVD), high-density plasmaCVD (HDPCVD), atomic layered deposition CVD (ALDCVD), plasma enhancedCVD (PECVD), or other suitable CVD process. SACVD processing below oneatmosphere of pressure provides good coverage of the sidewalls of thevia 230 with the oxide 244. In an embodiment, the oxide layer 244 is thesame material as the dielectric layer 206, such as silicon oxide.

After forming the oxide layer 244 in the via 230, the method 100proceeds to block 112 (FIG. 7) where the oxide layer 244 is etched usingan etch process 250 to remove the oxide layer from a bottom surface 252of the via 230 and also from an upper portion of the sidewalls of thevia 230. As should be understood, a blanket oxide dry etching processmay be used to remove all or substantially all of the oxide layer 244,except along the inner sidewalls of the via 230. As such, the oxidelayer is formed to shape a button/shoulder 254 at an upper portion ofthe via 230. A button/shoulder may also be formed at the bottom 252 ofthe via 230. In an embodiment, the step height between the top of theremaining oxide layer 244 and the top surface of the Si of the top wafer214 is a range of approximately 20 nm to approximately 300 nm.

The method 100 then proceeds to block 114 (FIG. 8) where a barrier filmlayer 260 is deposited into the via 230. As shown in FIG. 8, the barrierfilm layer 260 generally covers the inner walls of the via 230 justinside of the oxide layer 244 and also along the shoulders 254. In anembodiment, the barrier layer 260 comprises Ti formed using a PVD or CVDprocess to a thickness range of approximately 50 angstrom toapproximately 300 angstrom. In an alternative embodiment, the barrierlayer 260 comprises TiN formed using either a CVD process or a PVDprocess to a thickness range of approximately 50 angstrom toapproximately 1000 angstrom. The barrier film layer 260 may comprise thesame material as the barrier layer 240. A pre-treatment cleaning processmay be applied to the via 230 to remove native oxide in the bottom 252and shoulder 254 areas. The pre-treatment process may include argon (Ar)sputtering or wet cleaning. In various other embodiments, the barrierfilm layer 260 may be deposited using sputtering, CVD, or ALD.

The method 100 proceeds next to block 116 where the via 230 is filledwith a conductive filler film 270. The conductive filler 270 is aconductive material, such as tungsten (W). The conductive filler 270 maybe deposited using a tungsten deposition process, such as a CVD processat a temperature range of approximately 400 C to approximately 450 C. Anembodiment, uses a precursor, such as, WF6, SiH4, H2, or other suitablematerial to cause the tungsten fluoride to react with the hydrogen. Theconductive filler 270 may be formed to a thickness of approximately 0.5um to approximately 5 um above the top surface of the top wafer 214.However, other thicknesses of filler 270 may be used with the presentdisclosure. Other materials may be used for the conductive filler 270,such as aluminum, copper, nickel or other conductive metals. However,any electrically conductive substance may be used to form the conductivefiller 270. The conductive filler 270 may be formed using patterning,masking, deposition (e.g., physical vapor deposition (PVD), chemicalvapor deposition (CVD)) and/or any other methods now known or known inthe future for forming the conductive filler 270.

The method 100 then proceeds to block 118 where a process 280, such as aCMP process, is performed on the conductive layer 270 to remove excessmaterial. The CMP process removes excess conductive film 270 and aportion of the barrier layer 260 down to a top surface of the top wafer214 (e.g., Si wafer).

The method 100 then proceeds to block 120 where a top barrier film layer290 is formed on the top surface of the top wafer 214 and the via 230.In an embodiment, the barrier layer 290 comprises Ti formed using a PVDor CVD process to a thickness range of approximately 50 angstrom toapproximately 300 angstrom. In an alternative embodiment, the barrierlayer 290 comprises TiN formed using either a CVD process or a PVDprocess to a thickness range of approximately 50 angstrom toapproximately 1000 angstrom. The barrier film layer 290 may comprise thesame material as the barrier layer 240 and the barrier layer 260. Invarious other embodiments, the barrier film layer 290 may be depositedusing sputtering, CVD, or ALD. As should be understood, the barrierlayer 290 assists in electron flow to make an electrical connectionbetween the via 230 and the low resistance silicon of the top wafer 214.An embodiment of the electron flow is shown as arrows 292.

As should be understood, a floating structure (e.g., MEMS device) formedin the top wafer 214 may be electrically connected to the conductorlayer 208 by the via conductor 270. In an embodiment, the aspect ratioof this via hole 230 is larger than 5. In an embodiment, the viaconductor 232 may be a stacking structure including different materiallayers to achieve a good, low contact resistance. Such material layersmay include Ti, TiN, Al, W, or other similar materials. Using one ormore vias 230, the floating structure may also be electrically connectedto IC devices in the bottom wafer 202 and the perturbation can betransferred to a measurable electrical signal via processing of the ICdevices. Other processes may be performed on the device to package thedevice and provide outside connections with elements formed in thedevice 200.

The present disclosure provides for different embodiments of asemiconductor device having a high aspect ratio via and methods offabricating the same. In one embodiment, the present disclosure providesa semiconductor device having a substrate wafer, a dielectric layerformed on the substrate wafer, a patterned conductor layer formed in thedielectric layer, and a first barrier layer formed on the conductorlayer in the dielectric layer. A silicon top wafer is bonded to thedielectric. A via is then formed through the top wafer and through aportion of the dielectric layer to the first barrier layer. The viaalong the dielectric layer is narrower than the via along the top wafer.A via sidewall dielectric layer is formed along inner walls of the viaadjacent the top wafer to a distance below an upper surface of the topwafer, thereby forming an upper sidewall dielectric layer shoulder. Avia sidewall barrier layer is formed inward of the via sidewalldielectric layer to line the via from the first barrier layer to theupper surface of the top wafer. A conductive layer then fills the viainward of the via sidewall barrier layer. A top barrier layer is thenformed on the conductive layer, the sidewall barrier layer, and the topwafer.

In another embodiment, the present disclosure provides amicroelectromechanical system (MEMS) device. The MEMS device includes asubstrate wafer, a dielectric layer formed on the substrate wafer, apatterned conductor layer formed in the dielectric layer, and a firstbarrier layer formed on the conductor layer in the dielectric layer. Asilicon top wafer is bonded to the dielectric layer. A first portion ofthe silicon top wafer is configured as a MEMS sensor. A via is formedthrough a second portion of the top wafer and through a portion of thedielectric layer to the first barrier layer. A via sidewall dielectriclayer is formed along inner walls of the via adjacent the top wafer to adistance below an upper surface of the top wafer, thereby forming anupper sidewall dielectric layer shoulder. A via sidewall barrier layeris formed lining the via from the first barrier layer to the uppersurface of the top wafer, the via sidewall barrier layer inward of thevia sidewall dielectric layer. A conductive layer fills the via inwardof the via sidewall barrier layer. A top barrier layer is then formed onthe conductive layer, the sidewall barrier layer, and the top wafer.

In yet another embodiment, the present disclosure provides a method offorming a via in a semiconductor device. The method includes providing asemiconductor wafer and forming a cavity in the semiconductor wafer. Themethod also includes providing a top wafer and bonding the top wafer tothe semiconductor wafer. Then, the method includes etching a via throughthe top wafer to the cavity and depositing an oxide layer on sidewallsof the via. After depositing the oxide layer on the sidewalls of thevia, the method includes etching the oxide layer to remove the oxidelayer from a bottom surface of the via and also from an upper portion ofthe sidewalls of the via. A barrier film is deposited in the via, inwardof the oxide layer. Then, the method includes filling the via with aconductive film and depositing a top barrier film on the top wafer, theoxide layer, the barrier film, and the conductive film.

The foregoing has outlined features of several embodiments so that thoseskilled in the art may better understand the detailed description asprovided herein. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art should also realize thatsuch equivalent constructions do not depart from the spirit and scope ofthe present disclosure, and that they may make various changes,substitutions and alterations herein without departing from the spiritand scope of the present disclosure.

1. A method for forming a via structure, the method comprising: forminga via in a semiconductor substrate, wherein via sidewalls of the via aredefined by the semiconductor substrate; forming a dielectric layer onthe via sidewalls; removing the dielectric layer from a portion of thevia sidewalls; and forming a conductive layer to fill the via, whereinthe conductive layer is disposed on the dielectric layer and the portionof the via sidewalls.
 2. The method of claim 1 wherein the forming thedielectric layer includes forming an oxide layer.
 3. The method of claim1 wherein the removing the dielectric layer from the portion of the viasidewalls includes performing a dry etching process.
 4. The method ofclaim 1 further including removing any native oxide from the portion ofthe via sidewalls before forming the conductive layer.
 5. The method ofclaim 4 wherein the removing any native oxide from the portion of thevia sidewalls includes performing an argon sputtering process.
 6. Themethod of claim 4 wherein the removing any native oxide from the portionof the via sidewalls includes performing a wet cleaning process.
 7. Themethod of claim 1 wherein the forming the conductive layer to fill thevia, wherein the conductive layer is disposed over the dielectric layerand the portion of the via sidewalls, includes: forming a conductivebarrier layer over the via sidewalls; and forming a conductive via layerover the conductive barrier layer.
 8. The method of claim 7 wherein: theforming the conductive barrier layer includes forming atitanium-containing material layer; and the forming the conductive vialayer includes forming a tungsten-containing material layer.
 9. Themethod of claim 1 wherein the removing the dielectric layer from theportion of the via sidewalls includes removing the dielectric layer froma via bottom wall of the via.
 10. A method comprising: providing a firstsubstrate bonded to a second substrate, wherein the first substrate hasan interconnect structure that includes a conductive interconnect layer,wherein a cavity in the first substrate exposes the conductiveinterconnect layer; and forming a via structure that electricallycouples the first substrate to the second substrate, wherein the formingthe via structure includes: forming a via hole that extends through thesecond substrate, such that the via hole and the cavity in the firstsubstrate combine to form a via, wherein a via sidewall of the via isdefined by the second substrate and a via bottom wall of the via isdefined by the conductive interconnect layer, forming an oxide layerover a portion of the via sidewall, and after forming the oxide layerover the portion of the via sidewall, filling the via with a conductivelayer.
 11. The method of claim 10 wherein the forming the oxide layerover the portion of the via sidewall includes: depositing the oxidelayer using a chemical vapor deposition process, wherein the oxide layeris deposited over the via sidewall and the via bottom wall; andperforming a blanket oxide dry etching process to partially remove theoxide layer from the via sidewall and completely remove the oxide layerfrom the via bottom wall.
 12. The method of claim 10 further includingremoving any native oxide from the via sidewall and the via bottom wallbefore filling the via with the conductive layer.
 13. The method ofclaim 10 wherein the filling the via with the conductive layer includes:forming a conductive barrier layer over the via sidewall and the viabottom wall; and forming a conductive via layer over the conductivebarrier layer.
 14. The method of claim 13 wherein: the forming theconductive barrier layer includes forming a titanium-containing materiallayer; and the forming the conductive via layer includes forming atungsten-containing material layer.
 15. A method of forming a via in asemiconductor device, the method comprising: providing a semiconductorwafer; forming a cavity in the semiconductor wafer; providing a topwafer and bonding the top wafer to the semiconductor wafer; etching avia through the top wafer to the cavity; depositing an oxide layer onsidewalls of the via; etching the oxide layer to remove the oxide layerfrom a bottom surface of the via and also from an upper portion of thesidewalls of the via; depositing a barrier film in the via, inward ofthe oxide layer; filling the via with a conductive film; and depositinga top barrier film on the top wafer, the oxide layer, the barrier film,and the conductive film.
 16. The method of claim 15, further comprisingforming a dielectric layer on the semiconductor wafer before bonding thetop wafer to the semiconductor wafer.
 17. The method of claim 16,further comprising forming a patterned conductor layer in the dielectriclayer.
 18. The method of claim 17, further comprising forming a firstbarrier layer on the conductor layer in the dielectric layer.
 19. Themethod of claim 15, further comprising thinning the top wafer, therebyforming a microelectromechanical system (MEMS) device in the top wafer.20. The method of claim 15, wherein the depositing an oxide layer onsidewalls of the via is by using a chemical vapor deposition (CVD)process and depositing the oxide layer to a thickness range ofapproximately 0.1 um to approximately 2 um along the sidewalls of thevia.